公告本公司取得美國專利局核發US 8738836專利

2014-09-26 公司：力晶創新投資控股

1.專利、商標、著作或其他智慧財產權之內容:

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND

WRITE-IN METHOD THEREOF

2.專利、商標、著作或其他智慧財產權之取得日期:103/07/27

3.取得專利、商標、著作或其他智慧財產權之成本:NT$794,264

4.其他應敘明事項:

A non-volatile semiconductor memory device, comprising: a non-volatile

memory array, storing multi-values by setting a plurality of different

threshold voltages for each memory cell, and a control circuit, controlling

a write-in operation to the memory cell array. When data have been written

into the memory cell, the control circuit selects an adjacent word line,

uses an erasing level to perform write-in which is weaker than the data

write-in, and verifies soft programming of the amount of one page, such

that a narrow-banded erasing level distribution is realized in an adjacent

memory cell.

← 公告本公司取得美國專利局核發US 8754703專利

公告本公司取得日本專利局核發JP 5586666專利 →